Stud Diode 45 to 475Amps

COUGAR ELECTRONICS provide a wide range of axial lead diodes for low current rectifier applications. DO-X diodes are available in different type :

  • Standard recovery
  • Fast recovery
  • Super Fast recovery
  • Schottky

DO5

Clamp M-type

Our DO5 diodes are available in currents 45 to 85 Amps and come packaged in a glass to metal hermetically sealed case. This protects the passivated silicon junction to provide very stable electrical characteristics. These devices have low leakage at the rated voltage and excellent surge handling capabilities.

Range

PIV (V)45 Amp70 Amp85 Amp
40045D4070D4085D40
60045D6070D6085D60
80045D8070D8085D80
100045D10070D10085D100
120045D12070D12085D120
140045D14070D14085D140
160045D16070D16085D160
180045D18070D18085D180

Electrical characteristics

Max Forward Current single phase half wave45 Amp70 Amp85 Amp
Case Temperature (degC)122138132
Maximum Surge Current Single Cycle (Amps)70012001500
Maximum Forward Drop @25degC Case (V)1.151.251.15
Maximum Reverse Current FCA @150degC (mAmps)222
Maximum I Sq T (Isq.Sec)210060009300
Reverse Power for Avalanche (J)0.60.60.6
Storage Temperature (DegC)-65 to +200-65 to +200-65 to +200
Operating Temperature (Deg C)-65 to +200-65 to +200-65 to +200
Thermal Impedance Maximum Jct to Case (decC/W)1.250.650.6

DO8

Clamp M-type

Our DO5 diodes are available in currents 125 to 150 Amps and come packaged in a glass to metal hermetically sealed case. This protects the passivated silicon junction to provide very stable electrical characteristics. These devices have low leakage at the rated voltage and excellent surge handling capabilities.

Range

PIV (V)125 Amp150 Amp
400125D40150D40
600125D60150D60
800125D80150D80
1000125D100150D100
1200125D120150D120
1400125D140150D140
1600125D160150D160
1800125D180150D180

Electrical characteristics

Max Forward Current single phase half wave125 Amp150 Amp
Case Temperature (degC)130125
Maximum Surge Current Single Cycle (Amps)18002100
Maximum Forward Drop @25degC Case (V)1.21.1
Maximum Reverse Current FCA @150degC (mAmps)55
Maximum I Sq T (Isq.Sec)1350018200
Reverse Power for Avalanche (J)11
Storage Temperature (DegC)-65 to +200-65 to +200
Operating Temperature (Deg C)-65 to +190-65 to +190
Thermal Impedance Maximum Jct to Case (decC/W)0.40.35

DO9

Clamp M-type

Our DO9 diodes are available in currents 250 to 400 Amps and come packaged in a glass to metal hermetically sealed case. This protects the passivated silicon junction to provide very stable electrical characteristics. These devices have low leakage at the rated voltage and excellent surge handling capabilities.

Range

PIV (V)250 Amp300 Amp400 Amp
400250D40300D40400D40
600250D60300D60400D60
800250D80300D80400D80
1000250D100300D100400D100
1200250D120300D120400D120
1400250D140300D140400D140
1600250D160300D160400D160
1800250D180300D180400D180

Electrical characteristics

Max Forward Current single phase half wave250 Amp300 Amp400 Amp
Case Temperature (degC)122131120
Maximum Surge Current Single Cycle (Amps)450050006940
Maximum Forward Drop @25degC Case (V)1.21.11.1
Maximum Reverse Current FCA @150degC (mAmps)101010
Maximum I Sq T (Isq.Sec)84000104000311000
Reverse Power for Avalanche (J)223
Storage Temperature (DegC)-65 to +200-65 to +200-65 to +200
Operating Temperature (Deg C)-65 to +190-65 to +190-65 to +190
Thermal Impedance Maximum Jct to Case (decC/W)0.220.170.11

Infineon Diode

COUGAR ELECTRONICS is an official distributor of INFINEON semiconductors.

We offer a broad range of Diodes with Stud and Flat Base in voltage range of 200 V to 3600 V and a current of 56 A up to 475 A

All devices are assembled in high reliable, robust and hermetic sealed ceramic housings in order to avoid mechanical damages as well as almost any negative environmental influences as e.g. high humidity.

All products from Infineon Bipolar are RoHS compliant

Clamp M-type

Fast Diode Recovery

Product / Data sheetV DRM / V RRM [V]I FSM / I TSM [A] (@10ms, Tvj max)I FAVM /T C / I TAVM /T C [A/°C] (@180° el sin)∫I 2 dt [A ² s · 10 3 ] (@10ms, Tvj max)V T0 [V] (@Tvj max)r T [mΩ] (@Tvj max)T vj [°C]HousingConfiguration
D56S45C  4500135056/859.11.648125SW27 M12Fast Rectifier Diodes
D56U45C  4500120056/737.21.648125SW27 M12Fast Rectifier Diodes

Standard Diode for Rectifier

ProductV DRM / V RRM [V]I FSM / I TSM [A] (@10ms, Tvj max)I FAVM /T C / I TAVM /T C [A/°C] (@180° el sin)∫I 2 dt [A ² s · 10 3 ] (@10ms, Tvj max)V T0 [V] (@Tvj max)r T [mΩ] (@Tvj max)T vj [°C]HousingConfiguration
D121K20B  20002400120/130480.20.70.62180SW27 M12Rectifier Diodes
D121K18B  18002400120/130480.20.70.62180SW27 M12Rectifier Diodes
D255K06B  6004000255/751060.650.85180SW27 M13Rectifier Diodes
D255K04B  4004000255/751060.650.85180SW27 M13Rectifier Diodes
D255N06B  6004600255/1101060.650.85180SW27 M12Rectifier Diodes
D255N04B  4004600255/1101060.650.85180SW27 M12Rectifier Diodes
D255N02B  2004600255/1101060.650.85180SW27 M12Rectifier Diodes
D121N20B  20002600120/13033.80.721.9180SW27 M12Rectifier Diodes
D121N18B  16002600120/13033.80.721.9180SW27 M12Rectifier Diodes
D121N16B  16002600120/13033.80.721.9180SW27 M12Rectifier Diodes
D121N12B  12002600120/13033.80.721.9180SW27 M12Rectifier Diodes
D251K20B  20004700250/102110.50.80.85180SW27 M12Rectifier Diodes
D251K18B  18004700250/102110.50.80.85180SW27 M12Rectifier Diodes
D251K14B  14004700250/102110.50.80.85180SW27 M12Rectifier Diodes
D251K12B  12004700250/102110.50.80.85180SW27 M12Rectifier Diodes
D251N20B  20005300250/130140.50.80.85180SW27 M12Rectifier Diodes
D251N18B  18005300250/130140.50.80.85180SW27 M12Rectifier Diodes
D251N16B  16005300250/130140.50.80.85180SW27 M12Rectifier Diodes
D251N14B  14005300250/130140.50.80.85180SW27 M12Rectifier Diodes
D251N12B  12005300250/130140.50.80.85180SW27 M12Rectifier Diodes
D400K16B  16009800400/130480.20.70.62180SW41 M24Rectifier Diodes
D400N22B VF  22009800400/130480.20.70.62180SW41 M24Rectifier Diodes
D400N20B  20009800400/130480.20.70.62180SW41 M24Rectifier Diodes
D400N18B VF  18009800400/130480.20.70.62180SW41 M24Rectifier Diodes
D400N16B  16009800400/130480.20.70.62180SW41 M24Rectifier Diodes
D400N12B  12009800400/130480.20.70.62180SW41 M24Rectifier Diodes
D452N18E VF  180010800450/1305830.770.48180FL54 Flansch flangeRectifier Diodes
D452N16E  160010800450/1305830.770.48180FL54 Flansch flangeRectifier Diodes
D452N14E  140010800450/1305830.770.48180FL54 Flansch flangeRectifier Diodes
D452N12E VF  120010800450/1305830.770.48180FL54 Flansch flangeRectifier Diodes
D475N36B  360010900475/1005940.770.61160SW41 M24Rectifier Diodes

Stud Diode

There has been a notable increase in the developpment of Silicon Carbide semiconductor materials (SiC) in the past few years. It seems we are now close to a massive use of those new solutions, made possible by the considerable number of peoples working on the subject and price drop down. The adoption of SiC solutions are mainly driven by two factors : the miniaturization and the efficiency. Silicon Carbide based devices are a very promising answer to the market pressure on power converters compactness and efficiency. The lower maximum junction temperature, allow higher density of power on the semiconductors, wich leads to decrease the size of the cooling components. Nevertheless, this positive effect is also making the thermal management challenge harder. Water cooled and heat pipes solutions are now commonly considered by power electronics engineers see cougar electronics solutions for thermal management [caption id="attachment_2308" align="aligncenter" width="300"]Silicon Carbide Silicon Carbide Losses[/caption] SiC are also well known for their capacity to work at higher frequency than classical silicon based MOSFETs and IGBTs. The magnetics components size like inductors, and transformers is mainly linked to the frequency. In this way, increasing the frequency of the device drastically allow to reduce the size and thus the weight of the magnetics components. SiC technology has been massively adopted by early adopter applications like Solar Inverter and UPS. The adoption of this new technology is slower in the high power industry like motor drives, tractions and electrical grid converters due to the reluctance in the use of new material. The market of high power Silicon Carbide semiconductors is mainly holded by niche players, that were pioneers in their field. Most of the big semiconductor manufacturers are releasing or close to release new range of devices that will trigger the signal of a massive adoption. Contact COUGAR ELECTRONICS for advises and availablity of your semi-conductor. Other links : IEEE article about SiC
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